| PART |
Description |
Maker |
| RFRX1701PCBA-410 RFRX1701S2 RFRX1701SB RFRX1701SQ |
GaAs MMIC IQ Downconverter 17.7GHz to 26.5GHz
|
RF Micro Devices
|
| MAAM37000 |
Low Noise GaAs MMIC Amplifier 3.5-7GHz
|
MACOM[Tyco Electronics]
|
| RFPA1702PCBA-410 RFPA1702S2 RFPA1702SB RFPA1702SQ |
17.7GHz TO 19.7GHz HIGH LINEARITY POWER AMPLIFIER
|
RF Micro Devices
|
| MGFX39V0717 |
10.7-11.7GHz Band 8W Internally MATCHD GaAs FET
|
Mitsubishi Electric Corporation
|
| AA035P3-00 AA038N3-00 |
37-40 GHz GaAs MMIC low noise amplifier
31-35 GHz GaAs MMIC Driver Amplifier
315 GHz GaAs MMIC Driver Amplifier
|
Alpha Industries Inc
|
| 400MS8E |
HIGH IP3 GaAs MMIC MIXER, 1.7 - 2.2 GHz
|
美国讯泰微波有限公司上海代表
|
| HMC214MS8 HMC214MS8E |
HIGH IP3 GaAs MMIC MIXER, 2.4 - 4.0 GHz
|
Hittite Microwave Corporation
|
| HMMC-3024 |
DC-12 GHz High Efficiency GaAs HBT MMIC Divide-by-4 Prescaler(DC-12 GHz 高效砷化镓HBT单片微波集成电路定标
DC-12 GHz High Efficiency GaAs HBT MMIC Divide-by-4 Prescaler(DC-12 GHz 高效砷化镓HBT单片微波集成电路4定标
|
Agilent(Hewlett-Packard)
|
| MGFC41V7177 |
7.1 - 7.7GHz BAND 12W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC40V7177A |
7.1 - 7.7GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
|
| 316MS8E |
GaAs MMIC HIGH IP3 DOUBLEBALANCED MIXER, 1.5 - 3.8 GHz
|
美国讯泰微波有限公司上海代表
|
